1 motorola tmos power mosfet transistor device data
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this logic level insulated gate bipolar transistor (igbt) features gateemitter esd protection, gatecollector overvoltage protection from smartdiscretes ? monolithic circuitry for usage as an ignition coil driver . ? temperature compensated gatecollector clamp limits stress applied to load ? integrated esd diode protection ? low threshold voltage to interface power loads to logic or microprocessors ? low saturation voltage ? high pulsed current capability maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collectoremitter voltage v ces clamped vdc collectorgate voltage v cgr clamped vdc gateemitter voltage v ge clamped vdc collector current e continuous @ t c = 25 c i c 20 adc reversed collector current pulse width 100 s i cr 12 apk total power dissipation @ t c = 25 c (to220) p d 150 watts electrostatic voltage e gateemitter esd 3.5 kv operating and storage temperature range t j , t stg 55 to 175 c thermal characteristics thermal resistance e junction to case (to220) e junction to ambient r jc r ja 1.0 62.5 c/w maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 260 c mounting torque, 632 or m3 screw 10 lbf in (1.13 n m) unclamped inductive switching characteristics single pulse collectoremitter avalanche energy @ starting t j = 25 c @ starting t j = 150 c e as 550 150 mj smartdiscretes is a trademark of motorola, inc. this document contains information on a new product. specifications and information herein are subject to change without notice. rev 1 order this document by mgp20n40cl/d semiconductor technical data 20 amperes voltage clamped nchannel igbt v ce(on) = 1.8 volts 400 volts (clamped) case 221a09 style 9 to220ab g c e c g e rge ? motorola, inc. 1997
2 motorola tmos power mosfet transistor device data electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectortoemitter breakdown voltage (i clamp = 10 ma, t j = 40 to 150 c) v (br)ces 370 405 430 vdc zero gate voltage collector current (v ce = 350 v, v ge = 0 v, t j = 150 c) (v ce = 15 v, v ge = 0 v, t j = 150 c) i ces e e e e 500 100 a resistance gateemitter (t j = 40 to 150 c) r ge 10k 16k 30k gateemitter breakdown voltage (i g = 2 ma) v (br)ges 11 13 15 v collectoremitter reverse leakage (v ce = 15 v, t j = 150 c) i ecs e e 50 ma collectoremitter reversed breakdown voltage (i e = 75 ma) v (br)ecs 26 40 120 v on characteristics (1) gate threshold voltage (v ce = v ge , i c = 1 ma) (v ce = v ge , i c = 1 ma, t j = 150 c) v ge(th) 1.0 0.75 1.7 e 2.2 1.8 v collectoremitter onvoltage (v ge = 5 v, i c = 5 a) (v ge = 5 v, i c = 10 a) (v ge = 5 v, i c = 10 adc, t j = 150 c) v ce(on) e e e 1.1 1.4 1.4 1.4 1.9 1.8 v forward transconductance (v ce 5.0 v, i c = 10 a) g fe 10 18 e s dynamic characteristics input capacitance (v 25 vdc v 0 vdc c ies e 2800 e pf output capacitance (v ce = 25 vdc, v ge = 0 vdc, f = 1.0 mhz ) c oes e 200 e transfer capacitance f = 1 . 0 mhz) c res e 25 e switching characteristics (1) total gate charge (v 280 v i 20 a q g e 45 80 nc gateemitter charge (v cc = 280 v, i c = 20 a, v ge = 5 v ) q ge e 8.0 e gatecollector charge v ge = 5 v) q gc e 20 e turnoff delay time (v cc = 320 v, i c = 20 a, t d(off) e 14 e m s fall time ( cc , c , l = 200 h, r g = 1 k ) t f e 4.0 e turnon delay time (v cc = 14 v, i c = 20 a, t d(on) e 2.0 e m s rise time ( cc , c , l = 200 h, r g = 1 k ) t r e 6.0 e (1) pulse test: pulse width 300 m s, duty cycle 2%.
3 motorola tmos power mosfet transistor device data typical electrical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collectortoemitter voltage (volts) i c , collector current (amps) i c , collector current (amps) v ce , collectortoemitter voltage (volts) t j = 25 c v ge = 10 v t j = 125 c 01 2 3 8 20 10 0 30 40 4567 024 68 40 30 20 10 0 3 v figure 3. transfer characteristics figure 4. collectortoemitter saturation voltage versus junction temperature v ge , gatetoemitter voltage (volts) i c , collector current (amps) v ce , collectortoemitter voltage (volts) t j , junction temperature ( c) t j = 125 c v ge = 5 v 50 0 150 1.8 1.4 1.2 1.0 1.6 2.0 2.2 50 100 12 3 45 40 30 20 10 0 figure 5. capacitance variation v ce , collectortoemitter voltage (volts) 050 10000 1000 100 10 1.0 10 910 100 150 200 c, capacitance (pf) v ge = 10 v 5 v 4 v 3 v 5 v 4 v 25 c v ce = 10 v i c = 20 a 15 a 10 a t j = 25 c v ge = 0 v c ies c oes c res 25 75 125 175
4 motorola tmos power mosfet transistor device data figure 6. gatetoemitter voltage versus total charge q g , total gate charge (nc) v ge , gatetoemitter voltage (volts) 010 8 6 4 2 0 figure 7. latch current versus temperature , latch current (amps) temperature ( c) 025 16 12 8 4 0 20 50 75 100 125 20 30 40 10 mh 3 mh t j = 25 c i c = 20 a q g q ge q gc i l figure 8. thermal response t, time (s) r(t), normalized effective transient thermal resistance r q jc (t) = r(t) r q jc d curves apply for power pulse train shown read time at t 1 t j(pk) t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 0.1 1.0 1.0e 05 1.0e 04 1.0e 03 1.0e 02 1.0e 01 1.0e+00 1.0e+01 d = 0.5 0.02 0.2 0.05 0.1 single pulse 0.01
5 motorola tmos power mosfet transistor device data package dimensions case 221a09 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 1.15 z 0.080 2.04 q h z l v g n a k 123 4 d seating plane t c s t u r j style 9: pin 1. gate 2. collector 3. emitter 4. collector motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.: spd, strategic planning office, 141, p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 4321 nishigotanda, shagawaku, tokyo, japan. 0354878488 customer focus center: 18005216274 mfax ? : rmfax0@email.sps.mot.com touchtone 1 6022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, motorola fax back system us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 http://sps.motorola.com/mfax/ home page : http://motorola.com/sps/ mgp20n40cl/d ?
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